![]() ![]() Compared with the GaAs/GaInP QWIP reported in the last section, the peak wavelength increased slightly. The photoresponse has a peak around 4 μm with broad maxima. Such asymmetry could be related to either a structural difference in the two quantum well interfaces or to dopant migration during the material growth. This arises from an asymmetric quantum well potential profile. ![]() 72 The effect of the quaternary alloy was to reduce the valence band offset relative to lattice matched GaAs and thus increase the cut-off wavelength.Ī photovoltaic effect is observed from the photoresponse curve (see Figure 1 in reference 72). In 0.29As 0.39P 0.61 QWIP was grown by LP-MOCVD with 50 periods of 30 Å wide GaAs quantum wells separated by 280 Å wide GaInAsP (Eg = 1.8 eV at T=300 K) barriers. To increase the cut-off wavelength, a lattice-matched GaAs/Ga 0.71. ![]() Razeghi, in Handbook of Infra-red Detection Technologies, 2002 p-type GaAs/GaInAsP QWIP ![]()
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